Search results for " silicon carbide"
showing 8 items of 8 documents
Al-SiC Metal Matrix Composite production through Friction Stir Extrusion of aluminum chips
2017
Abstract The production of most mechanical component requires machining operation, thus usually implying the cut material to be wasted as scrap. Traditional recycling techniques are not able to efficiently recycle metal chips because of some critical aspects that characterize such kind of scraps (shape, oxide layers, contaminating residues, etc). Friction Stir Extrusion is an innovative solid state direct-recycling technique for metal machining chips. During the process, a rotating tool is plunged into a hollows matrix to compact, stir and finally, back extrudes the chips to be recycled in a full dense rod. This process results to be particularly relevant since no preliminary treatment of t…
First Characterization of Novel Silicon Carbide Detectors with Ultra-High Dose Rate Electron Beams for FLASH Radiotherapy
2023
Ultra-high dose rate (UHDR) beams for FLASH radiotherapy present significant dosimetric challenges. Although novel approaches for decreasing or correcting ion recombination in ionization chambers are being proposed, applicability of ionimetric dosimetry to UHDR beams is still under investigation. Solid-state sensors have been recently investigated as a valuable alternative for real-time measurements, especially for relative dosimetry and beam monitoring. Among them, Silicon Carbide (SiC) represents a very promising candidate, compromising between the maturity of Silicon and the robustness of diamond. Its features allow for large area sensors and high electric fields, required to avoid ion r…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Responsivity measurements of silicon carbide Schottky photodiodes in the UV range
2014
We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.
Superior Fischer-Tropsch performance of uniform cobalt nanoparticles deposited into mesoporous SiC
2020
Electrochemically-derived well-crystalline mesoporous silicon carbide (pSiC) was used as a host for cobalt nanoparticles to demonstrate superior catalytic performance during the CO hydrogenation according to Fischer-Tropsch. Colloidal Co nanoparticles (9 ± 0.4 nm) were prepared independently using colloidal recipes before incorporating them into pSiC and, for comparison purposes, into commercially available silica (Davisil) as well as foam-like MCF-17 supports. The Co/pSiC catalyst demonstrated the highest (per unit mass) catalytic activity of 117 µmol.g(CO)-1.g-1(Co).s-1 at 220 °C which was larger by about one order of magnitude as compared to both silica supported cobalt catalysts. Furthe…
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…
Modeling and simulation of a High Pressure Roller Crusher for silicon carbide production
2011
Author's version of a chapter published in the book: 11th International Conference on Electrical Power Quality and Utilisation. Also available from the publisher at: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6128963&tag=1 This paper describes the modeling and simulation of High Pressure Roller Crusher (HPRC) for the production of silicon cabide grains. The study is to make a model for simulation of a High Pressure Roller Crusher. A High Pressure Roller Crusher (HPRC) is an important part in the production of silicon carbide, where the grains are crushed into powder form and then sieved into specified sizes based on its usage. This paper will present a model based on Johanson's…
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
2018
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …